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DMHC6070LSD

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DMHC6070LSD Image

The DMHC6070LSD from Diodes Incorporated is a MOSFET with Continous Drain Current 2.5 to 4.1 A, Drain Source Resistance 60 to 250 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for DMHC6070LSD can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMHC6070LSD
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.5 to 4.1 A
  • Drain Source Resistance
    60 to 250 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    4.3 to 11.5 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SO-8
  • Applications
    DC Motor Control, DC-AC Inverters

Technical Documents
View details on the manufacturer's website
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