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DMG301NU

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The DMG301NU from Diodes Incorporated is a MOSFET with Continous Drain Current 0.18 to 0.26 A, Drain Source Resistance 4 to 5 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage 8 V, Gate Source Threshold Voltage 0.7 to 1.1 V. Tags: Through Hole. More details for DMG301NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG301NU
  • Manufacturer
    Diodes Incorporated
  • Description
    8 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.18 to 0.26 A
  • Drain Source Resistance
    4 to 5 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.7 to 1.1 V
  • Gate Charge
    0.36 nC
  • Power Dissipation
    0.32 to 0.40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    SOT-23
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
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