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NVD6824NLT4G-VF01

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NVD6824NLT4G-VF01 Image

The NVD6824NLT4G-VF01 from onsemi is a MOSFET with Continous Drain Current 41 A, Drain Source Resistance 16.5 to 23 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for NVD6824NLT4G-VF01 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD6824NLT4G-VF01
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    41 A
  • Drain Source Resistance
    16.5 to 23 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    34 to 66 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3
  • Applications
    Solenoid driver, Boost Switch

Technical Documents
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