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DMHT6016LFJ

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The DMHT6016LFJ from Diodes Incorporated is a MOSFET with Continous Drain Current 8.5 to 14.8 A, Drain Source Resistance 17 to 30 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMHT6016LFJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMHT6016LFJ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.5 to 14.8 A
  • Drain Source Resistance
    17 to 30 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    8.4 to 17 nC
  • Power Dissipation
    1.16 to 2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    V-DFN5045-12
  • Applications
    Motor Control, DC-DC Converters, Power Management

Technical Documents
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