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DMN1017UCP3

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DMN1017UCP3 Image

The DMN1017UCP3 from Diodes Incorporated is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 14.1 to 30 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN1017UCP3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1017UCP3
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, 7.5 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    14.1 to 30 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    16 nC
  • Power Dissipation
    1.47 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X3-DSN1010-3
  • Applications
    DC-DC Converters, Battery Management, Load Switch

Technical Documents
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