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DMN2012UCA6

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The DMN2012UCA6 from Diodes Incorporated is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 7 to 13 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Surface Mount. More details for DMN2012UCA6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2012UCA6
  • Manufacturer
    Diodes Incorporated
  • Description
    24 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    7 to 13 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    26 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X3-DSN2718-6
  • Applications
    Battery Management, Load Switch, Battery Protection

Technical Documents
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