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DMN2016UFX

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The DMN2016UFX from Diodes Incorporated is a MOSFET with Continous Drain Current 9.9 A, Drain Source Resistance 9.1 to 20 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1.5 V. Tags: Surface Mount. More details for DMN2016UFX can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2016UFX
  • Manufacturer
    Diodes Incorporated
  • Description
    24 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.9 A
  • Drain Source Resistance
    9.1 to 20 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1.5 V
  • Gate Charge
    14 nC
  • Power Dissipation
    2.23 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    V-DFN2050-4
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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