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DMN2024UVTQ

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DMN2024UVTQ Image

The DMN2024UVTQ from Diodes Incorporated is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 19 to 34 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for DMN2024UVTQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2024UVTQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    19 to 34 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    5.3 to 7.1 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
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