1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMN2029UVT

DMN2029UVT

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMN2029UVT Image

The DMN2029UVT from Diodes Incorporated is a MOSFET with Continous Drain Current 6.8 A, Drain Source Resistance 18 to 32 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1.5 V. Tags: Surface Mount. More details for DMN2029UVT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN2029UVT
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.8 A
  • Drain Source Resistance
    18 to 32 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1.5 V
  • Gate Charge
    7.1 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    DC-DC Converters, Power Management Functions, Backlighting

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products