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DMN2600UFB

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DMN2600UFB Image

The DMN2600UFB from Diodes Incorporated is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 600 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for DMN2600UFB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2600UFB
  • Manufacturer
    Diodes Incorporated
  • Description
    25 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    600 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    0.85 nC
  • Power Dissipation
    0.54 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-DFN1006-3

Technical Documents
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