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Si3453DV

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The Si3453DV from Vishay is a MOSFET with Continous Drain Current -3.4 A, Drain Source Resistance 137 to 276 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.2 to -2.5 V. Tags: Surface Mount. More details for Si3453DV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3453DV
  • Manufacturer
    Vishay
  • Description
    30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.4 A
  • Drain Source Resistance
    137 to 276 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.2 to -2.5 V
  • Gate Charge
    2.4 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Mobile computing - Load switch - DC/DC converters

Technical Documents
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