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DMN2065UWQ

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The DMN2065UWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 52 to 140 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for DMN2065UWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2065UWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    52 to 140 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    5.4 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, DC-DC Converters, Analog Switch

Technical Documents
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