1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. NVXK2TR80WDT

NVXK2TR80WDT

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

NVXK2TR80WDT Image

The NVXK2TR80WDT from onsemi is an Automotive-Qualified H-Bridge SiC Power MOSFET that is ideal for an onboard charger (OBC) for xEV applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 3 V, and a drain-sour

Product Specifications

View similar products

Product Details

  • Part Number
    NVXK2TR80WDT
  • Manufacturer
    onsemi
  • Description
    Automotive Qualified H-Bridge SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    116 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -15 to 25 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    56 nC
  • Power Dissipation
    82 W
  • Temperature operating range
    -55 to 175
  • Industry
    Automotive
  • Qualification
    AEC-Q100, AQG324
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    APM32
  • Applications
    DC-DC and On-Board Charger in xEV Applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products