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Si3129DV

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Si3129DV Image

The Si3129DV from Vishay is a MOSFET with Continous Drain Current -5.4 A, Drain Source Resistance 68.9 to 124.2 milliohm, Drain Source Breakdown Voltage -80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.5 to -2.5 V. Tags: Surface Mount. More details for Si3129DV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3129DV
  • Manufacturer
    Vishay
  • Description
    80 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.4 A
  • Drain Source Resistance
    68.9 to 124.2 milliohm
  • Drain Source Breakdown Voltage
    -80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.5 to -2.5 V
  • Gate Charge
    5.6 nC
  • Power Dissipation
    4.2 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6
  • Applications
    Power management for portable and consumer - Load switches - DC/DC converters

Technical Documents
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