1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. ZXMN2A03E6

ZXMN2A03E6

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

ZXMN2A03E6 Image

The ZXMN2A03E6 from Diodes Incorporated is a MOSFET with Continous Drain Current 4.6 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 V. Tags: Surface Mount. More details for ZXMN2A03E6 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ZXMN2A03E6
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.6 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 V
  • Gate Charge
    8.2 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT26
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products