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DMN26D0UFB4

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DMN26D0UFB4 Image

The DMN26D0UFB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 0.24 A, Drain Source Resistance 1800 to 10000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.6 to 0.9 V. Tags: Surface Mount. More details for DMN26D0UFB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN26D0UFB4
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.24 A
  • Drain Source Resistance
    1800 to 10000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.6 to 0.9 V
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1006-3
  • Applications
    DC-DC Converters, Power Management Functions

Technical Documents
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