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DMN3009LFVWQ

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The DMN3009LFVWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 3.5 to 7.4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN3009LFVWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3009LFVWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    3.5 to 7.4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    42 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8 (SWP)
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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