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DMN3013LDG

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The DMN3013LDG from Diodes Incorporated is a MOSFET with Continous Drain Current 7.6 to 15 A, Drain Source Resistance 10.9 to 17.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 10 V, Gate Source Threshold Voltage 0.75 to 1.2 V. Tags: Surface Mount. More details for DMN3013LDG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3013LDG
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7.6 to 15 A
  • Drain Source Resistance
    10.9 to 17.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    10 V
  • Gate Source Threshold Voltage
    0.75 to 1.2 V
  • Gate Charge
    5.7 nC
  • Power Dissipation
    2.16 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    DC-DC Converters, Power Management Functions, Analog Switch

Technical Documents
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