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DMN3016LFDE

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DMN3016LFDE Image

The DMN3016LFDE from Diodes Incorporated is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 8 to 16 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2 V. Tags: Surface Mount. More details for DMN3016LFDE can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3016LFDE
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    8 to 16 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2 V
  • Gate Charge
    25.1 nC
  • Power Dissipation
    2.02 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Battery Management Application, Power Management Functions, DC-DC Converters

Technical Documents
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