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FDS6612A-NB5E029A

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The FDS6612A-NB5E029A from onsemi is a MOSFET with Continous Drain Current 8.4 A, Drain Source Resistance 19 to 37 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for FDS6612A-NB5E029A can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS6612A-NB5E029A
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.4 A
  • Drain Source Resistance
    19 to 37 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    5.4 to 7.6 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Low voltage and battery powered applications

Technical Documents
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