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DMN33D8LT

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DMN33D8LT Image

The DMN33D8LT from Diodes Incorporated is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 5000 to 7000 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMN33D8LT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN33D8LT
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    5000 to 7000 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    1.23 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT523
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Technical Documents
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