1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMN33D8LV

DMN33D8LV

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMN33D8LV Image

The DMN33D8LV from Diodes Incorporated is a MOSFET with Continous Drain Current 0.35 A, Drain Source Resistance 2400 to 7000 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMN33D8LV can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN33D8LV
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.35 A
  • Drain Source Resistance
    2400 to 7000 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    1.23 nC
  • Power Dissipation
    0.43 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT563
  • Applications
    Motor Control, Power Management Functions, DC-DC Converters, Backlighting

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products