Si7212DN

Note : Your request will be directed to Vishay.

Si7212DN Image

The Si7212DN from Vishay is a MOSFET with Continous Drain Current 6.8 A, Drain Source Resistance 30 to 39 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.6 V. Tags: Surface Mount. More details for Si7212DN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    Si7212DN
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, Dual, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.8 A
  • Drain Source Resistance
    30 to 39 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.6 V
  • Gate Charge
    7 to 15 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Synchronous Rectification, Intermediate Driver

Technical Documents

Latest MOSFETs

View more products