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DMN4800LSSQ

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The DMN4800LSSQ from Diodes Incorporated is a MOSFET with Continous Drain Current 8.6 A, Drain Source Resistance 11 to 20 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 0.8 to 1.6 V. Tags: Surface Mount. More details for DMN4800LSSQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN4800LSSQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.6 A
  • Drain Source Resistance
    11 to 20 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    0.8 to 1.6 V
  • Gate Charge
    8.7 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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