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IPD50P03P4L-11

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IPD50P03P4L-11 Image

The IPD50P03P4L-11 from Infineon Technologies is a MOSFET with Continous Drain Current -50 to -42 A, Drain Source Resistance 8.3 to 18 Mohms, Drain Source Breakdown Voltage -30 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Through Hole. More details for IPD50P03P4L-11 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50P03P4L-11
  • Manufacturer
    Infineon Technologies
  • Description
    20-150 V, P-Channel Automotive MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -50 to -42 A
  • Drain Source Resistance
    8.3 to 18 Mohms
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    42 to 55 nC
  • Power Dissipation
    58 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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