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DMN6013LFGQ

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DMN6013LFGQ Image

The DMN6013LFGQ from Diodes Incorporated is a MOSFET with Continous Drain Current 10.3 A, Drain Source Resistance 9.3 to 18 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN6013LFGQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN6013LFGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10.3 A
  • Drain Source Resistance
    9.3 to 18 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    26.6 to 55.4 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Motor Control, DC to DC Converters, Reverse Polarity Protection

Technical Documents
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