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DMN61D8LVT

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The DMN61D8LVT from Diodes Incorporated is a MOSFET with Continous Drain Current 0.63 A, Drain Source Resistance 1100 to 2400 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2 V. Tags: Surface Mount. More details for DMN61D8LVT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN61D8LVT
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.63 A
  • Drain Source Resistance
    1100 to 2400 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2 V
  • Gate Charge
    0.74 nC
  • Power Dissipation
    1.09 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26

Technical Documents
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