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TSM85N10CZ

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TSM85N10CZ Image

The TSM85N10CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 81 A, Drain Source Resistance 9 to 10 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM85N10CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM85N10CZ
  • Manufacturer
    Taiwan Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    81 A
  • Drain Source Resistance
    9 to 10 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    154 nC
  • Power Dissipation
    1.5 to 210 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification in SMPS, High Speed Power Switching

Technical Documents
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