The RMP4N60T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 to 2500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP4N60T2 can be seen below.