1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Goford Semiconductor
  6. G08N02H

G08N02H

Download Datasheet Request Quote

Note : Your request will be directed to Goford Semiconductor.

G08N02H Image

The G08N02H from Goford Semiconductor is a MOSFET with Continous Drain Current 12 A, Drain Source Resistance 8.8 to 12.7 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for G08N02H can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    G08N02H
  • Manufacturer
    Goford Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    8.8 to 12.7 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    12.5 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3L
  • Applications
    Power switch, DC/DC converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products