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DMN65D7LFR4

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DMN65D7LFR4 Image

The DMN65D7LFR4 from Diodes Incorporated is a MOSFET with Continous Drain Current 0.26 A, Drain Source Resistance 1200 to 5300 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN65D7LFR4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN65D7LFR4
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.26 A
  • Drain Source Resistance
    1200 to 5300 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.51 to 1.04 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1010-4
  • Applications
    Load switch

Technical Documents
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