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DMP1008UCB9

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The DMP1008UCB9 from Diodes Incorporated is a MOSFET with Continous Drain Current -13.2 A, Drain Source Resistance 4.7 to 9.1 milliohm, Drain Source Breakdown Voltage -8 V, Gate Source Voltage -6 V, Gate Source Threshold Voltage -1.1 to -0.4 V. Tags: Surface Mount. More details for DMP1008UCB9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP1008UCB9
  • Manufacturer
    Diodes Incorporated
  • Description
    8 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13.2 A
  • Drain Source Resistance
    4.7 to 9.1 milliohm
  • Drain Source Breakdown Voltage
    -8 V
  • Gate Source Voltage
    -6 V
  • Gate Source Threshold Voltage
    -1.1 to -0.4 V
  • Gate Charge
    8.2 nC
  • Power Dissipation
    1.53 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-WLB1515-9
  • Applications
    DC-DC Converters, Battery Management, Load Switch

Technical Documents
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