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RM5N650LD

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The RM5N650LD from Rectron Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 750 to 900 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for RM5N650LD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM5N650LD
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    750 to 900 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    10.5 to 15 nC
  • Power Dissipation
    46 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252(D-PAK)
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents
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