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DMP2006UFGQ

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The DMP2006UFGQ from Diodes Incorporated is a MOSFET with Continous Drain Current -17.5 A, Drain Source Resistance 4200 to 17000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for DMP2006UFGQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2006UFGQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -17.5 A
  • Drain Source Resistance
    4200 to 17000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    64 to 140 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Load Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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