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TSM085NB03DCR

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TSM085NB03DCR Image

The TSM085NB03DCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 51 A, Drain Source Resistance 6.5 to 15 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.5 V. Tags: Surface Mount. More details for TSM085NB03DCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM085NB03DCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    51 A
  • Drain Source Resistance
    6.5 to 15 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.5 V
  • Gate Charge
    10 to 20 nC
  • Power Dissipation
    0.4 to 40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    BLDC Motor Control, Battery Power Management, DC-DC Converter, Secondary Synchronous Rectification

Technical Documents
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