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YJG25GP06A

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The YJG25GP06A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current -25 A, Drain Source Resistance 38 to 65 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.3 V. Tags: Surface Mount. More details for YJG25GP06A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJG25GP06A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -25 A
  • Drain Source Resistance
    38 to 65 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.3 V
  • Gate Charge
    8.8 to 18.7 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5060
  • Applications
    Automotive Systems, Industrial DC/DC Conversion Circuits

Technical Documents
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