1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Rectron Semiconductor
  6. RM50N250T2

RM50N250T2

Download Datasheet Request Quote

Note : Your request will be directed to Rectron Semiconductor.

RM50N250T2 Image

The RM50N250T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 31 to 39 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM50N250T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM50N250T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    31 to 39 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    34 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power switching application, Hard switched and high frequency circuits, Uninterruptible power supply, Halogen free

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products