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DMP2010UFG

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The DMP2010UFG from Diodes Incorporated is a MOSFET with Continous Drain Current -12.7 A, Drain Source Resistance 9500 to 12500 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1.2 to -0.4 V. Tags: Surface Mount. More details for DMP2010UFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2010UFG
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12.7 A
  • Drain Source Resistance
    9500 to 12500 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1.2 to -0.4 V
  • Gate Charge
    50 to 103 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Load Switch, Power Management Functions

Technical Documents
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