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PXP3R7-12QU

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PXP3R7-12QU Image

The PXP3R7-12QU from Nexperia is a MOSFET with Continous Drain Current -30.6 to -11.8 A, Drain Source Resistance 3.2 to 8.5 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.9 to -0.47 V. Tags: Surface Mount. More details for PXP3R7-12QU can be seen below.

Product Specifications

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Product Details

  • Part Number
    PXP3R7-12QU
  • Manufacturer
    Nexperia
  • Description
    -8 to 8 V, 75 to 110 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -30.6 to -11.8 A
  • Drain Source Resistance
    3.2 to 8.5 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.9 to -0.47 V
  • Gate Charge
    75 to 110 nC
  • Power Dissipation
    1.8 to 50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MLPAK33
  • Applications
    High-side load switch, Battery management, DC-to-DC conversion, Switching circuits

Technical Documents
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