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DMP2035UTS

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The DMP2035UTS from Diodes Incorporated is a MOSFET with Continous Drain Current -6.04 A, Drain Source Resistance 23 to 62 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for DMP2035UTS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2035UTS
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -6.04 A
  • Drain Source Resistance
    23 to 62 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    15.4 nC
  • Power Dissipation
    0.89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8

Technical Documents
View details on the manufacturer's website
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