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DMP2110UFDB

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The DMP2110UFDB from Diodes Incorporated is a MOSFET with Continous Drain Current -3.2 A, Drain Source Resistance 168 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for DMP2110UFDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2110UFDB
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -3.2 A
  • Drain Source Resistance
    168 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    6 to 12.7 nC
  • Power Dissipation
    1.14 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Load Switch, Power Management Functions, Portable Power Adaptors

Technical Documents
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