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DMP25H18DLFDE

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DMP25H18DLFDE Image

The DMP25H18DLFDE from Diodes Incorporated is a MOSFET with Continous Drain Current -0.26 A, Drain Source Resistance 10000 to 18000 milliohm, Drain Source Breakdown Voltage -250 V, Gate Source Voltage -40 to 40 V, Gate Source Threshold Voltage -2.5 to -0.5 V. Tags: Surface Mount. More details for DMP25H18DLFDE can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP25H18DLFDE
  • Manufacturer
    Diodes Incorporated
  • Description
    250 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.26 A
  • Drain Source Resistance
    10000 to 18000 milliohm
  • Drain Source Breakdown Voltage
    -250 V
  • Gate Source Voltage
    -40 to 40 V
  • Gate Source Threshold Voltage
    -2.5 to -0.5 V
  • Gate Charge
    2.8 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    General Purpose Interfacing Switch, Load Switching, Battery Management Application, Power Management Functions

Technical Documents
View details on the manufacturer's website
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