PSMN021-100YL

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PSMN021-100YL Image

The PSMN021-100YL from Nexperia is a MOSFET with Continous Drain Current 35 to 49 A, Drain Source Resistance 16.8 to 60.7 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 2.45 V. Tags: Surface Mount. More details for PSMN021-100YL can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN021-100YL
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 35.8 to 65.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 to 49 A
  • Drain Source Resistance
    16.8 to 60.7 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 2.45 V
  • Gate Charge
    35.8 to 65.6 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK56
  • Applications
    Synchronous rectification in power supply equipment, Chargers & adaptors, Fast charge & USB-PD applications, Battery powered motor control, LED lighting & TV backlight

Technical Documents

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