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RM130N200HD

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The RM130N200HD from Rectron Semiconductor is a MOSFET with Continous Drain Current 132 A, Drain Source Resistance 9.1 to 10.7 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for RM130N200HD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM130N200HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    132 A
  • Drain Source Resistance
    9.1 to 10.7 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    56 nC
  • Power Dissipation
    429 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TO-263(D2-PAK)
  • Applications
    Synchronous Rectification in SMPS, Hard Switching and High Speed Circuit, Power Tools, UPS, Motor Control, Halogen-free

Technical Documents
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