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ES2300

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The ES2300 from Hunan Jingxin Microelectronics is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 23.0 to 45 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.45 to 1.1 V. Tags: Surface Mount. More details for ES2300 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ES2300
  • Manufacturer
    Hunan Jingxin Microelectronics
  • Description
    20 V, 2.8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    23.0 to 45 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.45 to 1.1 V
  • Gate Charge
    4.1 to 10.5 nC
  • Switching Speed
    58.0 to 80 ns
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM applications, Load switch, Power management in portable/desktop PCs, DC/DC conversion
  • Note
    Input Capacitance :- 311 pF

Technical Documents
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