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DMP26M1UFG

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The DMP26M1UFG from Diodes Incorporated is a P-Channel Enhancement Mode MOSFET. This single-channel MOSFET has a gate-source voltage of ±10 V and gate threshold voltage of up to -1 V. It has a drain-source breakdown voltage of -20 V and drain-so

Product Specifications

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Product Details

  • Part Number
    DMP26M1UFG
  • Manufacturer
    Diodes Incorporated
  • Description
    P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -71 A
  • Drain Source Resistance
    4.7 to 5.5 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    75 to 164 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Load Switch, Power Management Functions

Technical Documents
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