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DMP2900UW

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The DMP2900UW from Diodes Incorporated is a MOSFET with Continous Drain Current -0.6 A, Drain Source Resistance 750 to 1500 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1 to -0.5 V. Tags: Surface Mount. More details for DMP2900UW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP2900UW
  • Manufacturer
    Diodes Incorporated
  • Description
    -6 to 6 V, 0.7 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.6 A
  • Drain Source Resistance
    750 to 1500 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.5 V
  • Gate Charge
    0.7 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    DC-DC Converters, Load Switch, Power Management Functions

Technical Documents
View details on the manufacturer's website
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