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DMP3056LSDQ

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The DMP3056LSDQ from Diodes Incorporated is a MOSFET with Continous Drain Current -6.9 A, Drain Source Resistance 45 to 65 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.1 to -1 V. Tags: Surface Mount. More details for DMP3056LSDQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP3056LSDQ
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 6.8 to 13.7 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -6.9 A
  • Drain Source Resistance
    45 to 65 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.1 to -1 V
  • Gate Charge
    6.8 to 13.7 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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