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DMT10H014LSS

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The DMT10H014LSS from Diodes Incorporated is a MOSFET with Continous Drain Current 8.9 A, Drain Source Resistance 11.5 to 25 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 3 V. Tags: Surface Mount. More details for DMT10H014LSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H014LSS
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 33.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.9 A
  • Drain Source Resistance
    11.5 to 25 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 3 V
  • Gate Charge
    33.3 nC
  • Power Dissipation
    1.67 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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