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DMT10H017LPD

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The DMT10H017LPD from Diodes Incorporated is a MOSFET with Continous Drain Current 54.7 A, Drain Source Resistance 13.7 to 30.3 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT10H017LPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMT10H017LPD
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 14.4 to 28.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    54.7 A
  • Drain Source Resistance
    13.7 to 30.3 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    14.4 to 28.6 nC
  • Power Dissipation
    2.2 to 78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI5060-8
  • Applications
    Synchronous Rectifier, DC-DC Converters, Primary Side Switching

Technical Documents
View details on the manufacturer's website
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