The DMT10H017LPD from Diodes Incorporated is a MOSFET with Continous Drain Current 54.7 A, Drain Source Resistance 13.7 to 30.3 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMT10H017LPD can be seen below.